IDT70T3539M
High-Speed 2.5V 512K x 36 Dual-Port Synchronous Static RAM
Truth Table I—Read/Write and Enable Control
Industrial and Commercial Temperature Ranges
(1,2,3,4)
Byte 3
Byte 2
Byte 1
Byte 0
OE
X
X
X
X
X
X
X
X
X
X
L
L
L
L
L
L
L
H
X
CLK
X
CE 0
H
X
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
X
X
CE 1
X
L
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
X
X
BE 3
X
X
H
H
H
H
L
H
L
L
H
H
H
L
H
L
L
X
X
BE 2
X
X
H
H
H
L
H
H
L
L
H
H
L
H
H
L
L
X
X
BE 1
X
X
H
H
L
H
H
L
H
L
H
L
H
H
L
H
L
X
X
BE 0
X
X
H
L
H
H
H
L
H
L
L
H
H
H
L
H
L
X
X
R/ W
X
X
X
L
L
L
L
L
L
L
H
H
H
H
H
H
H
X
X
ZZ
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
H
I/O 27-35
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
D IN
High-Z
D IN
D IN
High-Z
High-Z
High-Z
D OUT
High-Z
D OUT
D OUT
High-Z
High-Z
I/O 18-26
High-Z
High-Z
High-Z
High-Z
High-Z
D IN
High-Z
High-Z
D IN
D IN
High-Z
High-Z
D OUT
High-Z
High-Z
D OUT
D OUT
High-Z
High-Z
I/O 9-17
High-Z
High-Z
High-Z
High-Z
D IN
High-Z
High-Z
D IN
High-Z
D IN
High-Z
D OUT
High-Z
High-Z
D OUT
High-Z
D OUT
High-Z
High-Z
I/O 0-8
High-Z
High-Z
High-Z
D IN
High-Z
High-Z
High-Z
D IN
High-Z
D IN
D OUT
High-Z
High-Z
High-Z
D OUT
High-Z
D OUT
High-Z
High-Z
MODE
Deselected –Power Down
Deselected –Power Down
All Bytes Deselected
Write to Byte 0 Only
Write to Byte 1 Only
Write to Byte 2 Only
Write to Byte 3 Only
Write to Lower 2 Bytes Only
Write to Upper 2 bytes Only
Write to All Bytes
Read Byte 0 Only
Read Byte 1 Only
Read Byte 2 Only
Read Byte 3 Only
Read Lower 2 Bytes Only
Read Upper 2 Bytes Only
Read All Bytes
Outputs Disabled
Sleep Mode
NOTES:
1. "H" = V IH, "L" = V IL, "X" = Don't Care.
2. ADS , CNTEN , REPEAT = X.
3. OE and ZZ are asynchronous input signals.
4. It is possible to read or write any combination of bytes during a given access. A few representative samples have been illustrated here.
5678 tbl 02
Truth Table II—Address Counter Control
(1,2)
Previous
Internal
L
Address
An
X
X
X
Internal
Address
X
An
An + 1
X
Address
Used
An
An + 1
An + 1
An
CLK
ADS
L (4)
H
H
X
CNTEN
X
(5)
H
X
REPEAT (6)
H
H
H
L (4)
I/O (3)
D I/O (n)
D I/O (n+1)
D I/O (n+1)
D I/O (n)
MODE
External Address Used
Counter Enabled —Internal Address generation
External Address Blocked —Counter disabled (An + 1 reused)
Counter Set to last valid ADS load
NOTES:
5678 tbl 03
1. "H" = V IH, "L" = V IL, "X" = Don't Care.
2. Read and write operations are controlled by the appropriate setting of R/ W , CE 0 , CE 1 , BE n and OE .
3. Outputs configured in flow-through output mode: if outputs are in pipelined mode the data out will be delayed by one cycle.
4. ADS and REPEAT are independent of all other memory control signals including CE 0 , CE 1 and BE n
5. The address counter advances if CNTEN = V IL on the rising edge of CLK, regardless of all other memory control signals including CE 0 , CE 1 , BE n.
6. When REPEAT is asserted, the counter will reset to the last valid address loaded via ADS . This value is not set at power-up: a known location should be loaded
via ADS during initialization if desired. Any subsequent ADS access during operations will update the REPEAT address location.
5
6.42
相关PDF资料
IDT70T3719MS166BBG IC SRAM 18MBIT 166MHZ 324BGA
IDT70T633S10BCI IC SRAM 9MBIT 10NS 256BGA
IDT70T651S12DRI IC SRAM 9MBIT 12NS 208QFP
IDT70T653MS12BCI IC SRAM 18MBIT 12NS 256BGA
IDT70V05L55G IC SRAM 64KBIT 55NS 68PGA
IDT70V06L55G IC SRAM 128KBIT 55NS 68PGA
IDT70V07L35G IC SRAM 256KBIT 35NS 68PGA
IDT70V08S15PF IC SRAM 512KBIT 15NS 100TQFP
相关代理商/技术参数
IDT70T3589S133BC 功能描述:IC SRAM 2MBIT 133MHZ 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70T3589S133BC8 功能描述:IC SRAM 2MBIT 133MHZ 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70T3589S133BCI 功能描述:IC SRAM 2MBIT 133MHZ 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70T3589S133BCI8 功能描述:IC SRAM 2MBIT 133MHZ 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70T3589S133BF 功能描述:IC SRAM 2MBIT 133MHZ 208FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70T3589S133BF8 功能描述:IC SRAM 2MBIT 133MHZ 208FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70T3589S133BFI 功能描述:IC SRAM 2MBIT 133MHZ 208FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70T3589S133BFI8 功能描述:IC SRAM 2MBIT 133MHZ 208FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)